H8NA60FI DATASHEET PDF

H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.

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Search field Part name Part description. On State Drain Current.

h8na60f datasheet & applicatoin notes – Datasheet Archive

Information furnished is believed to be accurate and reliable. G ate-source Volt age. All parts are brand new with original packaging.

T otal Dissipat ion at T. Gat e Threshold Voltage V. Images are for reference only See Product Specifications. Normalized On Resistance vs Temperature. We have won the affirmation of international markets for good prices, fast delivery and guaranteed quantity.

Gate Charge test Circuit. In Stock Can ship immediately Price: Get a partial refund and keep the item. I nsulation W ithstand Voltage DC. Excellent service capabilities 4.

Professional international purchasing capacity 3. We will then send you full instructions by email We never store your card details, these remain with Paypal.

With 11 years of professional experience in distribution in this area, we own datasheeet big and professional sale team with members from all over the world. Derating Curve for TO Pulse width limited by safe operating area.

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H8NA60FI View Datasheet(PDF) – STMicroelectronics

Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag.

Normalized Gate Threshold Voltage vs Temperature. Source-drain Current Source-drain Current pulsed.

Unclamped Inductive Load Test Circuit. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

Thermal Impedance for TO Single Pulse Avalanche Energy starting T. This publication supersedes and replaces all information previously supplied.

Drain Current continuous at T. Please click on the “Add to Cart” Button and then proceed to checkout. Datasheet or technical specification in PDF format is available on request for download.

Gate Charge vs Gate-source Voltage. Safe Operating Area for TO No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. I take care in describing my goods as honestly and accurately as I can. Drain- gate Voltage R.

However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. Specialize in obsolete transistors and hard-to-find parts at cheap price. Paypal accepted, order online today! Items are shipped using postal services and are charged at cost. Covers your purchase price and original shipping. Items will be shipped within business days of payment.

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If you don’t receive the item in 25 days, just let us know,a new package or replacement will be issued. Static Drain-source On Resistance. Specification mentioned in this publication are subject to change without notice.

Switching Safe Operating Area. We sell High-power transistors, darlington power transistors, high-voltage transistors, high-frequency, high-gain transistors, switching transistors, RF, small-signal transistors, SCR, triac, mosfet, three-terminal regulator, IC, thick-film hybrid integrated circuits and so on.

H8NA60F1 datasheet

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