H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.
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h8na60f datasheet & applicatoin notes – Datasheet Archive
Information furnished is believed to be accurate and reliable. G ate-source Volt age. All parts are brand new with original packaging.
T otal Dissipat ion at T. Gat e Threshold Voltage V. Images are for reference only See Product Specifications. Normalized On Resistance vs Temperature. We have won the affirmation of international markets for good prices, fast delivery and guaranteed quantity.
Gate Charge test Circuit. In Stock Can ship immediately Price: Get a partial refund and keep the item. I nsulation W ithstand Voltage DC. Excellent service capabilities 4.
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H8NA60FI View Datasheet(PDF) – STMicroelectronics
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Normalized Gate Threshold Voltage vs Temperature. Source-drain Current Source-drain Current pulsed.
Unclamped Inductive Load Test Circuit. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
Thermal Impedance for TO Single Pulse Avalanche Energy starting T. This publication supersedes and replaces all information previously supplied.
Drain Current continuous at T. Please click on the “Add to Cart” Button and then proceed to checkout. Datasheet or technical specification in PDF format is available on request for download.
Gate Charge vs Gate-source Voltage. Safe Operating Area for TO No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. I take care in describing my goods as honestly and accurately as I can. Drain- gate Voltage R.
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